Features
▪ Single voltage operation with range of 2.7 V to 3.6 V
▪ 128 Mbit (32 x 4 Mbit physical block) NOR Flash
Memory
▪ Serial Peripheral Interface (SPI) compatible support:
• Supports SPI modes 0 and 3
• Supports dual and quad output read
▪ Maximum operating frequency:
• 133 MHz maximum operating frequency at 85 oC
• 120 MHz maximum operating frequency at 105 oC
▪ Read operations:
• 70 MHz normal read
• 120 MHz fast read
• 133 MHz Quad Output fast read
• Dual I/O data transfer rate up to 240 Mbps
• Quad I/O data transfer rate up to 480 Mbps
• Quad Output data transfer rate up to 532 Mbps
• Continuous read with 8/16/32/64-byte wrap
▪ Flexible, optimized erase architecture, including
erase suspend and resume
▪ Flexible programming:
• Byte/Page program (1 to 256 Bytes)
• Program suspend and resume
▪ Fast program and erase times:
• 0.6 ms typical page (256 byte) program time
• 70 ms typical 4-kbyte block erase time
• 150 ms typical 32-kbyte block erase time
• 250 ms typical 64-kbyte block erase time
• Full chip erase: 30 s typical
▪ Hardware and software Write Protection:
• Hardware-controlled locking of protected sector
via WP pin
• Three 256-byte OTP-capable security registers
• Write protect all or part of memory via software
with top/bottom block selection
▪ Serial Flash Discoverable Parameter (SFDP)
register
▪ Low power dissipation:
• 13 µA standby current at 85 oC
• 20 µA standby current at 105 oC
• 2 µA deep power down current at 85 oC
• 5 µA deep power down current at 105 oC
▪ Endurance:
• 100K program/erase cycles at 85 oC
• 10K program/erase cycles at 105 oC
▪ Data retention:
• 100K program/erase cycles at 85 oC
• 10K program/erase cycles at 105 oC
▪ Temperature range:
• Industrial: -40 oC to 85 oC
• Extended Temperature Range: -40 oC to 105 oC
▪ Industry standard green (Pb/Halide-free/RoHS
compliant) package options
• 8-lead 0.208” Wide SOIC (8S4)
• 8-pad (5 x 6 x 0.6 mm) UDFN (8MA1)