Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose . . . . . . . . . . . . . . . . . . . . . 3 x 105 RAD(Si)
- SEU Immunity . . . . . . . . . . .<1 x 10-10 Errors/Bit/Day
- SEU LET Threshold. . . . . . . . . . . >100MeV/(mg/cm2)
• Input Logic Levels . . VIL = (0.3)(VCC), VIH = (0.7)(VCC)
• Output Current . . . . . . . . . . . . . . . . . . . . . . ±8mA (Min)
• Quiescent Supply Current . . . . . . . . . . . . . 100A (Max)
• Propagation Delay . . . . . . . . . . . . . . . . . . . . 15ns (Max)

Description
The Radiation Hardened ACS08MS is a Quad 2-Input AND
Gate. For each gate, a HIGH level on both the A and B
inputs results in a HIGH level on the Y output. A LOW level
on either the A or B input results in a LOW level on the Y
output. All inputs are buffered and the outputs are designed
for balanced propagation delay and transition times.
The ACS08MS is fabricated on a CMOS Silicon on
Sapphire (SOS) process, which provides an immunity to
Single Event Latch-up and the capability of highly reliable
performance in any radiation environment. These devices
offer significant power reduction and faster performance
when compared to ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed below must be used when ordering.
Detailed Electrical Specifications for the ACS08 are
contained in SMD 5962-95651.