Description
These devices are very fast IGBTs developed
using advanced PowerMESH™ technology. This
process guarantees an excellent trade-off
between switching performance and low on-state
behavior. These devices are well-suited for
resonant or soft-switching applications.

Features
 Lower on voltage drop (VCE(sat))
 Lower CRES / CIES ratio (no cross-conduction
susceptibility)
 Very soft ultra fast recovery antiparallel
diode
 Short-circuit withstand time 10 μs

Applications
 High frequency motor controls
 SMPS and PFC in both hard switch and
resonant topologies
 Motor drives