DESCRIPTION
The WED2ZLRSP01S, Dual Independent Array, NBL-SSRAM device employs high-speed, Low-Power CMOS silicon and is fabricated using an advanced CMOS process. WEDC’s 24Mb, Sync Burst SRAM MCP integrates two totally independent arrays, the fi rst organized as a 512K x 32, and the second a 256K x 32.

FEATURES
■ Fast clock speed: 166, 150, 133, and 100MHz
■ Fast access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns
■ Fast OE# access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns
■ Single +2.5V ± 5% power supply (VCC)
■ Snooze Mode for reduced-standby power
■ Individual Byte Write control
■ Clock-controlled and registered addresses, data I/Os and control signals
■ Burst control (interleaved or linear burst)
■ Packaging:
    ■ 209-bump BGA package
■ Low capacitive bus loading