DESCRIPTION
TS9410VB is a high power infrared, 940 nm surface emitting
diode in GaAlAs technology with high radiant power and
high speed. Polarity configuration is “n-up”.

FEATURES
• Package type: chip
• Package form: single chip
• Technology: surface emitter
• Dimensions chip (L x W x H in mm):
0.260 x 0.260 x 0.17
• Peak wavelength:  = 940 nm
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912