| производитель | номер детали | датащи | подробное описание детали |
 Fairchild Semiconductor |
HUFA75637P3
|
202Kb / 10P |
44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
|
 Intersil Corporation |
HUF75531SK8
|
183Kb / 12P |
6A, 80V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET
April 2000 |
|
RFF60P06
|
88Kb / 8P |
25A?? 60V, 0.030 Ohm, P-Channel Power MOSFET
September 1998 |
|
RFG60P05E
|
94Kb / 7P |
60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET
July 1999 |
|
RFP150N
|
127Kb / 10P |
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
March 2000 |
 Fairchild Semiconductor |
IRFP150N
|
148Kb / 10P |
44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
|
 Anaren Microwave |
R1K131350R0G5F3
|
167Kb / 2P |
Wire Bondable
|
 Vishay Siliconix |
RFLW3N
|
307Kb / 5P |
High Frequency Wire Bondable RF Spiral Inductor
17-Sep-13 |
|
RFLW5N
|
265Kb / 5P |
High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050"
17-Sep-13 |
|
RFLW5N
|
274Kb / 5P |
High Frequency Wire Bondable RF Spiral Inductor, 0.050" x 0.050"
29-Jan-2020 |