MS1501 датащи(PDF) - Advanced Power Technology

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MS1501 датащи (PDF) - Advanced Power Technology

MS1501 Datasheet PDF - Advanced Power Technology


номер детали	MS1501

скачать	MS1501 скачать

объем файла	97.25 Kbytes

Page	3 Pages

производитель	ADPOW [Advanced Power Technology]

домашняя страница	http://www.advpowertech.com

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подробное описание детали

RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

MS1501 Datasheet (PDF)

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скачать датащи

MS1501 Datasheet PDF - Advanced Power Technology


номер детали	MS1501

скачать	MS1501 Click to download

объем файла	97.25 Kbytes

Page	3 Pages

производитель	ADPOW [Advanced Power Technology]

домашняя страница	http://www.advpowertech.com

Logo

подробное описание детали	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

MS1501 датащи (HTML) - Advanced Power Technology

MS1501 Datasheet HTML 1Page - Advanced Power Technology

MS1501 Datasheet HTML 2Page - Advanced Power Technology

MS1501 Datasheet HTML 3Page - Advanced Power Technology

MS1501 Информация о продукте

DESCRIPTION:
The MS1501 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V.

Features
• 860 MHz
• POUT = 2 WATTS
• GP = 8.5 dB MINIMUM
• GOLD METALLIZATION
• CLASS A LINEAR OPERATION
• COMMON EMITTER CONFIGURATION

Аналогичный номер детали - MS1501

производитель	номер детали	датащи	подробное описание детали
List of Unclassifed Man...	MS150	233Kb / 2P	Power Film Resistors
Caddock Electronics, In...	MS150	400Kb / 2P	Type MS Power Film Resistors
Advanced Power Technolo...	MS1502	97Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
Advanced Power Technolo...	MS1503	99Kb / 3P	RF & MICROWAVE TRANSISTORS WIDE BAND VHF/UHF APPLICATIONS
Microsemi Corporation	MS1504	173Kb / 4P	RF & MICROWAVE TRANSISTORS

Аналогичное описание - MS1501

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	SD1437	34Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 13-Jun-1995
	SD1439	33Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS 13-Jun-1995
	SD1448	71Kb / 6P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Nov-1992
	SD4010	70Kb / 5P	RF & MICROWAVE TRANSISTORS UHF TV LINEAR APPLICATIONS Nov-1992
	SD4011	52Kb / 5P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS Nov-1992
Advanced Power Technolo...	MS1502	97Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
	MS1508	115Kb / 3P	RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
	MS1512	97Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
	MS1581	96Kb / 3P	RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
	MS1582	119Kb / 3P	RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

О Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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