FEATURES
• Smart 5 technology
– 5 V VCC
– 5 V or 12 V VPP
• High performance read access time
LH28F008SC-V85/SCH-V85
– 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)
LH28F008SC-V12/SCH-V12
– 120 ns (5.0±0.5 V)
• Enhanced automated suspend options
– Byte write suspend to read
– Block erase suspend to byte write
– Block erase suspend to read
• Enhanced data protection features
– Absolute protection with VPP = GND
– Flexible block locking
– Block erase/byte write lockout during power
transitions
• SRAM-compatible write interface
• High-density symmetrically-blocked architecture
– Sixteen 64 k-byte erasable blocks
• Enhanced cycling capability
– 100 000 block erase cycles
– 1.6 million block erase cycles/chip
• Low power management
– Deep power-down mode
– Automatic power saving mode decreases ICC
in static mode
• Automated byte write and block erase
– Command user interface
– Status register
• ETOXTM* V nonvolatile flash technology
• Packages
– 40-pin TSOP Type I (TSOP040-P-1020)
Normal bend/Reverse bend
– 44-pin SOP (SOP044-P-0600)
– 48-ball CSP (FBGA048-P-0608)
* ETOX is a trademark of Intel Corporation.