Key Features
• Gain, return loss and bias externally adjustable
• On-chip active bias for consistent bias current and
repeatable performance
• DC – 2000 MHz bandwidth
• Low noise: typical NF < 2 dB to 1000 MHz
• Flexible 5 V to 8 V biasing
• IDD = 120 mA typical at VDD 5 V in application
circuit
• 19 dB typical gain in application circuit
• +40 dBm typical OIP3
• +61 dBm typical OIP2
• +21 dBm typical P1dB
• Low distortion: CSO -66 dBc, CTB -78 dBc
• (10 dBmV / ch at input, 80 ch NTSC flat)
• pHEMT device technology