Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3rd generation IGBTs offer superior conduction
and switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such as
induction heating and MWO.

Features
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM (Note 1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• This Device is Pb−Free and is RoHS Compliant

Applications
• Induction Heating, MWO