Description
Fifth Generation HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercialindustrial
applications at power dissipation levels to approximately
50 watts. The low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance throughout the industry.

 Logic - Level Gate Drive
 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Lead-Free