| производитель | номер детали | датащи | подробное описание детали |
Fairchild Semiconductor |
FQD11P06TM
|
1Mb / 9P |
P-Channel QFET짰 MOSFET -60 V, -9.4 A, 185 m廓
|
ON Semiconductor |
NVBGS4D1N15MC
|
233Kb / 7P |
MOSFET - Single N-Channel 150 V, 4.1 m, 185 A
December, 2019 ??Rev. 0 |
|
NTBGS4D1N15MC
|
356Kb / 8P |
MOSFET - Single N-Channel 150 V, 4.1 m, 185 A
December, 2019 ??Rev. 0 |
|
NTMT185N60S5H
|
397Kb / 9P |
MOSFET - Power, Single N-Channel, SUPERFET V, FAST, Power88 600 V, 185 m, 15 A
December,2021-Rev. 4 |
|
NTMTSC002N10MC
|
273Kb / 7P |
MOSFET - Power, Single N-Channel 100 V, 2.0 m, 236 A
September, 2021-Rev. 1 |
|
NTP185N60S5H
|
220Kb / 9P |
MOSFET - Power, Single N-Channel, SUPERFET V, FAST, TO220 600 V, 185 m, 15 A
August, 2021-Rev. 1 |
|
NVLJWS022N06CL
|
160Kb / 7P |
MOSFET - Power, Single N-Channel 60 V, 21 m, 25 A
April, 2022 ??Rev. 1 |
|
NVMJS1D7N04C
|
363Kb / 7P |
MOSFET ??Power, Single N-Channel 40 V, 1.7 m, 185 A
July, 2019 ??Rev. 1 |
|
NVMTS001N06CL
|
401Kb / 7P |
MOSFET ??Power, Single N-Channel 60 V, 0.81 m, 398.2 A
May, 2021 ??Rev. 2 |
|
NVMYS1D6N04CL
|
235Kb / 7P |
MOSFET - Power, Single N-Channel 40 V, 1.6 m, 185 A
September, 2021 ??Rev.2 |
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
