Description
The ACE16242A is the N-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.

Features
⚫ 20V/3.3A,RDS(ON)=19mΩ@VGS=4.5V
⚫ 20V/2.8A,RDS(ON)=24mΩ@VGS=2.5V
⚫ 20V/2.3A,RDS(ON)=32mΩ@VGS=1.8V
⚫ Super high-density cell design for extremely low RDS (ON)
⚫ Exceptional on-resistance and maximum DC current capability

Applications
⚫ Power Management in Note book
⚫ Portable Equipment
⚫ Battery Powered System
⚫ DC/DC Converter
⚫ Load Switch
⚫ DSC
⚫ LCD Display inverter