Description
The ACE12322A is the Dual N-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are particularly suited for low voltage application
notebook computer power management and other battery powered circuits where high-side switching,
low in-line power loss and resistance to transients are needed.

Features
 20V/4.0A,RDS(ON)=26mΩ@VGS=4.5V
 20V/3.0A,RDS(ON)=35mΩ@VGS=2.5V
 20V/2.0A,RDS(ON)=50mΩ@VGS=1.8V
 Super high density cell design for extremely low RDS (ON)
 Exceptional on-resistance and maximum DC current capability
 DFN2X2-6L package design

Applications
 Power Management in Note book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
 DSC
 LCD Display inverter