FEATURES
• For general purpose applications
• This diode features low turn-on voltage. The
devices are protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring
• The low forward voltage drop and fast switching make it
ideal for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications
• This diode is also available in a DO-35 case with type
designation BAT86
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

APPLICATIONS
• Applications where a very low forward voltage is required