General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent
ruggedness and broadband performance of this device makes it ideal for digital
transmitter applications.
Features and benefits
 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
 Peak envelope power load power = 140 W
 Power gain = 21 dB
 Drain efficiency = 49 %
 Third order intermodulation distortion = 34 dBc
 DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent
drain current IDq = 0.5 A:
 Average output power = 33 W
 Power gain = 21 dB
 Drain efficiency = 34 %
 Shoulder distance = 33 dBc (4.3 MHz from center frequency)
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Applications
 Communication transmitter applications in the UHF band
 Industrial applications in the UHF band