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CY7C1311AV18 датащи (PDF) - Cypress Semiconductor

CY7C1311AV18 Datasheet PDF - Cypress Semiconductor
номер детали CY7C1311AV18
скачать  CY7C1311AV18 скачать
объем файла   327.27 Kbytes
Page   22 Pages
производитель  CYPRESS [Cypress Semiconductor]
домашняя страница  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor
подробное описание детали 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1311AV18 Datasheet (PDF)

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CY7C1311AV18 Datasheet PDF - Cypress Semiconductor

номер детали CY7C1311AV18
скачать  CY7C1311AV18 Click to download

объем файла   327.27 Kbytes
Page   22 Pages
производитель  CYPRESS [Cypress Semiconductor]
домашняя страница  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor
подробное описание детали 18-Mb QDRTM-II SRAM 4-Word Burst Architecture

CY7C1311AV18 датащи (HTML) - Cypress Semiconductor


CY7C1311AV18 Информация о продукте

Functional Description
The CY7C1311AV18/CY7C1313AV18/CY7C1315AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II architecture. QDR-II architecture consists of two separate ports to access the memory array. The Read port has dedicated Data Outputs to support Read operations and the Write Port has dedicated Data Inputs to support Write operations. QDR-II architecture has separate data inputs and data outputs to completely eliminate the need to “turn-around” the data bus required with common I/O devices. Access to each port is accomplished through a common address bus. Addresses for Read and Write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II Read and Write ports are completely independent of one another. In order to maximize data throughput, both Read and Write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 8-bit words (CY7C1311AV18) or 18-bit words (CY7C1313AV18) or 36-bit words (CY7C1315AV18) that burst sequentially into or out of the device. Since data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus “turn-arounds”.
Depth expansion is accomplished with Port Selects for each port. Port selects allow each port to operate independently.
All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.

Features
• Separate Independent Read and Write Data Ports
   — Supports concurrent transactions
• 250-MHz Clock for High Bandwidth
• 4-Word Burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz
• Two input clocks (K and K) for precise DDR timing
   — SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew and flight time mismatching
• Echo clocks (CQ and CQ) simplify data capture in high speed systems
• Single multiplexed address input bus latches address inputs for both Read and Write ports
• Separate Port Selects for depth expansion
• Synchronous internally self-timed writes
• Available in ×8, ×18, and ×36 configurations
• Full data coherancy providing most current data
• Core Vdd=1.8(+/-0.1V);I/O Vddq=1.4V to Vdd)
• 13 × 15 x 1.4 mm 1.0-mm pitch FBGA package, 165-ball (11 × 15 matrix)
• Variable drive HSTL output buffers
• JTAG 1149.1 Compatible test access port
• Delay Lock Loop (DLL) for accurate data placement




Аналогичный номер детали - CY7C1311AV18

производительномер деталидатащиподробное описание детали
logo
Cypress Semiconductor
CY7C1311BV18 CYPRESS-CY7C1311BV18 Datasheet
259Kb / 23P
18-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1311BV18 CYPRESS-CY7C1311BV18 Datasheet
505Kb / 28P
18-Mbit QDR??II SRAM 4-Word Burst Architecture
CY7C1311BV18 CYPRESS-CY7C1311BV18 Datasheet
1Mb / 32P
18-Mbit QDR??II SRAM 4-Word Burst Architecture
CY7C1311BV18-167BZC CYPRESS-CY7C1311BV18-167BZC Datasheet
259Kb / 23P
18-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1311BV18-167BZC CYPRESS-CY7C1311BV18-167BZC Datasheet
505Kb / 28P
18-Mbit QDR??II SRAM 4-Word Burst Architecture
More results


Аналогичное описание - CY7C1311AV18

производительномер деталидатащиподробное описание детали
logo
Cypress Semiconductor
CY7C1311BV18 CYPRESS-CY7C1311BV18 Datasheet
259Kb / 23P
18-Mbit QDR-II SRAM 4-Word Burst Architecture
CY7C1310AV18 CYPRESS-CY7C1310AV18 Datasheet
449Kb / 21P
18-Mb QDR-II SRAM 2-Word Burst Architecture
CY7C1311BV18 CYPRESS-CY7C1311BV18_06 Datasheet
505Kb / 28P
18-Mbit QDR??II SRAM 4-Word Burst Architecture
CY7C1311CV18 CYPRESS-CY7C1311CV18 Datasheet
695Kb / 31P
18-Mbit QDR??II SRAM 4-Word Burst Architecture
CY7C1317AV18 CYPRESS-CY7C1317AV18 Datasheet
492Kb / 20P
18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1317BV18 CYPRESS-CY7C1317BV18 Datasheet
479Kb / 28P
18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1317CV18 CYPRESS-CY7C1317CV18 Datasheet
696Kb / 31P
18-Mbit DDR-II SRAM 4-Word Burst Architecture
CY7C1311JV18 CYPRESS-CY7C1311JV18 Datasheet
689Kb / 27P
18-Mbit QDR II SRAM 4-Word Burst Architecture
CY7C1311BV18 CYPRESS-CY7C1311BV18_11 Datasheet
1Mb / 32P
18-Mbit QDR??II SRAM 4-Word Burst Architecture
CY7C1313CV18 CYPRESS-CY7C1313CV18_11 Datasheet
1Mb / 29P
18-Mbit QDR짰 II SRAM 4-Word Burst Architecture
More results




О Cypress Semiconductor


Cypress Semiconductor-американская компания, которая специализируется на разработке и производстве высокопроизводительных цифровых и аналоговых интегрированных цепей (ICS).
Компания была основана в 1982 году и со штаб -квартирой в Сан -Хосе, штат Калифорния, США.
Cypress предлагает широкий спектр продуктов, включая микроконтроллеры, продукты памяти, решения для беспроводной связи и другие цифровые и аналоговые ICS.
Продукты компании используются в различных приложениях, таких как потребительская электроника, автомобильные системы, промышленные системы и многое другое.
Cypress известен своим опытом в области смешанной сигнальной и программируемой системы на чипе (PSOC), высококачественных продуктов и инноваций в области встроенных систем.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.




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