Description
The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions. Product status link STPSC10C065-Y Product summary IF(AV) 10 A VRRM 650 V Tj (max.) 175 °C Automotive 650 V power Schottky silicon carbide diode STPSC10C065-Y Datasheet DS12402 - Rev 2 - September 2018 For further information contact your local STMicroelectronics sales office.

Features
■ AEC-Q101 qualified
■ No reverse recovery charge in application current range
■ Switching behavior independent of temperature
■ Recommended to PFC applications
■ PPAP capable
■ ECOPACK® 2 compliant component