SL22-L датащи(PDF) - Formosa MS

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SL22-L датащи (PDF) - Formosa MS

SL22-L Datasheet PDF - Formosa MS


номер детали	SL22-L

скачать	SL22-L скачать

объем файла	69.88 Kbytes

Page	2 Pages

производитель	FORMOSA [Formosa MS]

домашняя страница	http://www.formosams.com

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подробное описание детали

Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type

SL22-L Datasheet (PDF)

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скачать датащи

SL22-L Datasheet PDF - Formosa MS


номер детали	SL22-L

скачать	SL22-L Click to download

объем файла	69.88 Kbytes

Page	2 Pages

производитель	FORMOSA [Formosa MS]

домашняя страница	http://www.formosams.com

Logo

подробное описание детали	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type

SL22-L датащи (HTML) - Formosa MS

SL22-L Datasheet HTML 1Page - Formosa MS

SL22-L Datasheet HTML 2Page - Formosa MS

SL22-L Информация о продукте

2.0A Low VF Surface Mount Schottky Barrier Rectifiers - 20V-40V

Features
• Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmenta standard of MIL-STD-19500 / 228
• Suffix "-H" indicates Halogen-free part, ex. SL22-L-H

Аналогичный номер детали - SL22-L

производитель	номер детали	датащи	подробное описание детали
WILLAS ELECTRONIC CORP	SL22-L	320Kb / 4P	2.0A LOW VF SCHOTTKY BARRIER RECTIFIERS-20V-40V SMA-LS PACKAGE
Formosa MS	SL22-L	165Kb / 7P	Low VF Chip Schottky Barrier Rectifier
Formosa MS	SL22-L	165Kb / 7P	Low VF Chip Schottky Barrier Rectifier

Аналогичное описание - SL22-L

производитель	номер детали	датащи	подробное описание детали
Formosa MS	FM120-L	68Kb / 2P	Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SL12-L	69Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SL12-MH	66Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SL13-M	69Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SL22-M	70Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SL22-MH	78Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SL32-A	69Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SL32-AL	69Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SUL32-A	76Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
	SUL32-AL	68Kb / 2P	Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type

О Formosa MS

Formosa MS is a Taiwanese semiconductor company that specializes in the design and manufacture of integrated circuits (ICs) and semiconductor devices for a wide range of applications. The company was founded in 1979 and is based in Taipei, Taiwan.

Formosa MS's product portfolio includes analog and mixed-signal ICs, power management ICs, LED lighting ICs, and automotive ICs, among others. The company's products are used in various industries, such as automotive, industrial, consumer electronics, and communications.

Formosa MS is committed to quality and reliability, and it has obtained various certifications, including ISO 9001, ISO 14001, and IATF 16949. The company's manufacturing facilities use advanced production equipment and quality control processes to ensure the highest levels of product performance and reliability.

Today, Formosa MS is recognized as a leading semiconductor company in Taiwan, with a strong reputation for providing high-quality and innovative solutions to its customers. The company continues to invest in research and development to stay at the forefront of new technologies and applications in the semiconductor industry.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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