UPD5702 датащи(PDF) - California Eastern Labs

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UPD5702 датащи (PDF) - California Eastern Labs

UPD5702 Datasheet PDF - California Eastern Labs


номер детали	UPD5702

скачать	UPD5702 скачать

объем файла	176.33 Kbytes

Page	4 Pages

производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

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подробное описание детали

NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

UPD5702 Datasheet (PDF)

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UPD5702 Datasheet PDF - California Eastern Labs


номер детали	UPD5702

скачать	UPD5702 Click to download

объем файла	176.33 Kbytes

Page	4 Pages

производитель	CEL [California Eastern Labs]

домашняя страница	http://www.cel.com

Logo

подробное описание детали	NECs 2.4 GHz Si LD MOS POWER AMPLIFIER

UPD5702 датащи (HTML) - California Eastern Labs

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UPD5702 Datasheet HTML 2Page - California Eastern Labs

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UPD5702 Datasheet HTML 4Page - California Eastern Labs

UPD5702 Информация о продукте

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

DESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.

FEATURES
• Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage : VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)TI

Аналогичный номер детали - UPD5702

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	UPD5702TU	231Kb / 13P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT 2003
California Eastern Labs	UPD5702TU-A	391Kb / 10P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT
Renesas Technology Corp	UPD5702TU-E2	231Kb / 13P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT 2003
California Eastern Labs	UPD5702TU-E2-A	391Kb / 10P	Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

Аналогичное описание - UPD5702

производитель	номер детали	датащи	подробное описание детали
ANADIGICS, Inc	RFSP2010	75Kb / 4P	2.4-2.5 GHz Power Amplifier 05/2003
List of Unclassifed Man...	AP1091	246Kb / 7P	2.4~2.5 GHz Power Amplifier
List of Unclassifed Man...	AP1098	104Kb / 5P	2.4~2.5 GHz Power Amplifier
NEC	NE5511279A-T1	99Kb / 3P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
List of Unclassifed Man...	AP1093	304Kb / 7P	2.4~2.5 GHz Power Amplifier
ANADIGICS, Inc	RFSP2020	79Kb / 4P	2.4-2.5 GHz Power Amplifier 05/2003
Silicon Storage Technol...	SST12LP00	489Kb / 14P	2.4-2.5 GHz Power Amplifier
Silicon Storage Technol...	SST12LP14	226Kb / 12P	2.4 GHz Power Amplifier
California Eastern Labs	NE5511279A-A	297Kb / 4P	NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Skyworks Solutions Inc.	SE2433T	1Mb / 13P	2.4 GHz Power Amplifier

О California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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