| производитель | номер детали | датащи | подробное описание детали |
 Toshiba Semiconductor |
TC55W1600FT
|
202Kb / 13P |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
|
TC55VBM416AFTN55
|
204Kb / 14P |
1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM
|
|
TC55W800FT-55
|
188Kb / 13P |
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
|
 NEC |
UPD23C32300
|
241Kb / 16P |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
|
|
UPD485505
|
174Kb / 20P |
LINE BUFFER 5K-WORD BY 8-BIT
|
 Renesas Technology Corp |
M5M29KE131BTP
|
336Kb / 33P |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
|
M6MGB331S4BKT
|
171Kb / 3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
|
M6MGB331S8AKT
|
127Kb / 3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
|
M6MGB331S8BKT
|
128Kb / 3P |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
|
M5M5W817KT-70HI
|
149Kb / 11P |
8388608-BIT (524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT) CMOS STATIC RAM
|