| производитель | номер детали | датащи | подробное описание детали |
 STMicroelectronics |
STPSC20H065CW
|
111Kb / 8P |
650 V power Schottky silicon carbide diode
10-Oct-2012 |
 Sanken electric |
FGA65A3H
|
394Kb / 12P |
VCE = 650 V, IC = 15 A Trench Field Stop IGBT
|
 SIFIRST TECHNOLOGIES NA... |
SFL952
|
121Kb / 2P |
Built-in 650 V power switch
|
|
SFL958
|
120Kb / 2P |
Built-in 650 V power switch
|
 List of Unclassifed Man... |
NV6113
|
1Mb / 21P |
650 V GaNFast??Power IC
|
|
NV6117
|
1Mb / 21P |
650 V GaNFast??Power IC
|
 STMicroelectronics |
STPSC8065
|
503Kb / 9P |
650 V power Schottky silicon carbide diode
July 2017 Rev 2 |
|
STPSC4H065DLF
|
381Kb / 12P |
650 V power Schottky silicon carbide diode
31-Mar-2021 |
 Rohm |
BM3G007MUV-LB
|
1Mb / 29P |
650 V GaN HEMT Power Stage
13.Jan.2023 Rev.001 |
|
BM3G015MUV-LB
|
1Mb / 29P |
650 V GaN HEMT Power Stage
13.Jan.2023 Rev.001 |