SWITCHMODE™ Series NPN Silicon Power Transistor

This device is designed for high speed, high current, high power applications.

Features

• High DC Current Gain:

   hFE min = 20 at IC = 12 A

• Low VCE(sat), VCE(sat)

   max = 0.6 V at IC = 8 A

• Very Fast Switching Times:

   TF max = 0.4 μs at IC = 25 A

• These are Pb−Free Devices*