| производитель | номер детали | датащи | подробное описание детали |
 Samsung semiconductor |
K9W8G08U1M
|
601Kb / 38P |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
 Macronix International |
MX23J12840
|
280Kb / 20P |
128M-BIT NAND INTERFACE XtraROMTM
|
|
MX23J25640
|
279Kb / 20P |
256M-BIT NAND INTERFACE XtraROMTM
|
 Toshiba Semiconductor |
TC58NVG2S3ETA00
|
499Kb / 70P |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
 Hynix Semiconductor |
H27U4G8F2D
|
1,015Kb / 62P |
4 Gbit (512M x 8 bit) NAND Flash
|
 Macronix International |
MX30LF1208AA-TI
|
762Kb / 48P |
512M-bit NAND Flash Memory
|
 Generalplus Technology ... |
GPR27P01GA
|
668Kb / 23P |
1G-BIT NAND INTERFACE OTP
|
 Toshiba Semiconductor |
TC58BVG2S0HBAI6
|
2Mb / 53P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2018-06-01C |
|
TC58NVG2S0FTAI0
|
527Kb / 71P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2012-09-01 |
|
TC58NYG2S3ETA00
|
504Kb / 70P |
4 GBIT (512M × 8 BIT) CMOS NAND E2 PROM
2010-07-13C |