PXFE181507FC-V1-R2 датащи(PDF) - Cree, Inc

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PXFE181507FC-V1-R2 датащи (PDF) - Cree, Inc

PXFE181507FC-V1-R2 Datasheet PDF - Cree, Inc


номер детали	PXFE181507FC-V1-R2

скачать	PXFE181507FC-V1-R2 скачать

объем файла	550.25 Kbytes

Page	8 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

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подробное описание детали

Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

PXFE181507FC-V1-R2 Datasheet (PDF)

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PXFE181507FC-V1-R2 Datasheet PDF - Cree, Inc


номер детали	PXFE181507FC-V1-R2

скачать	PXFE181507FC-V1-R2 Click to download

объем файла	550.25 Kbytes

Page	8 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

Logo

подробное описание детали	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

PXFE181507FC-V1-R2 датащи (HTML) - Cree, Inc

PXFE181507FC-V1-R2 Datasheet HTML 1Page - Cree, Inc

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PXFE181507FC-V1-R2 Datasheet HTML 7Page - Cree, Inc

PXFE181507FC-V1-R2 Datasheet HTML 8Page - Cree, Inc

Аналогичный номер детали - PXFE181507FC-V1-R2

производитель	номер детали	датащи	подробное описание детали
WOLFSPEED, INC.	PXFE181507FC-V1-R2	695Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-28

Аналогичное описание - PXFE181507FC-V1-R2

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PXFC193808SV	196Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2015-01-13
	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
Cree, Inc	PXAE183708NB	486Kb / 6P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz
	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
	PXAC182908FV	515Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 1805 ??1880 MHz
	PXAD184218FV	465Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz
	PTFB181702FC	554Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz
WOLFSPEED, INC.	PXFE181507FC	695Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 – 1880 MHz Rev. 04, 2023-06-28

О Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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