GTVA261802FC-V1-R0 датащи(PDF) - Cree, Inc

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GTVA261802FC-V1-R0 датащи (PDF) - Cree, Inc

GTVA261802FC-V1-R0 Datasheet PDF - Cree, Inc


номер детали	GTVA261802FC-V1-R0

скачать	GTVA261802FC-V1-R0 скачать

объем файла	495.3 Kbytes

Page	8 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

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подробное описание детали

Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

GTVA261802FC-V1-R0 Datasheet (PDF)

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GTVA261802FC-V1-R0 Datasheet PDF - Cree, Inc


номер детали	GTVA261802FC-V1-R0

скачать	GTVA261802FC-V1-R0 Click to download

объем файла	495.3 Kbytes

Page	8 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

Logo

подробное описание детали	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz

GTVA261802FC-V1-R0 датащи (HTML) - Cree, Inc

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GTVA261802FC-V1-R0 Datasheet HTML 7Page - Cree, Inc

GTVA261802FC-V1-R0 Datasheet HTML 8Page - Cree, Inc

Аналогичный номер детали - GTVA261802FC-V1-R0

производитель	номер детали	датащи	подробное описание детали
WOLFSPEED, INC.	GTVA261802FC-V1-R0	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27

Аналогичное описание - GTVA261802FC-V1-R0

производитель	номер детали	датащи	подробное описание детали
Cree, Inc	GTVA261701FA	591Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 ??2690 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTVA262701FA	489Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTVA261701FA-V1	750Kb / 10P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Rev. 05.1, 2022-1-27
	GTVA262701FA_V2	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA262701FA	506Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Rev. 04.3, 2022-1-27
	GTVA262711FA	594Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 – 2690 MHz Rev. 04.4, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

О Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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