VDSS = 600V

RDS (ON) = 1.9 Ω

ID = 4.0A

Description

The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for high voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss and resistance to transistors are needed.

Features

• Critical DC Electrical parameters specified at elevated Temp.

• Rugged internal source-drain diode can eliminate the need for external Zener diode transient suppresser

• Super high density cell design for extremely low RDS(ON)