PTFB211503FL датащи(PDF) - Cree, Inc

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PTFB211503FL датащи (PDF) - Cree, Inc

PTFB211503FL Datasheet PDF - Cree, Inc


номер детали	PTFB211503FL

скачать	PTFB211503FL скачать

объем файла	578.83 Kbytes

Page	13 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

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подробное описание детали

Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz

PTFB211503FL Datasheet (PDF)

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PTFB211503FL Datasheet PDF - Cree, Inc


номер детали	PTFB211503FL

скачать	PTFB211503FL Click to download

объем файла	578.83 Kbytes

Page	13 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

Logo

подробное описание детали	Thermally-Enhanced High Power RF LDMOS FET 150 W, 2110 ??2170 MHz

PTFB211503FL датащи (HTML) - Cree, Inc

PTFB211503FL Datasheet HTML 1Page - Cree, Inc

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PTFB211503FL Datasheet HTML 5Page - Cree, Inc

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PTFB211503FL Datasheet HTML 7Page - Cree, Inc

PTFB211503FL Datasheet HTML 8Page - Cree, Inc

PTFB211503FL Datasheet HTML 9Page - Cree, Inc

PTFB211503FL Datasheet HTML 10Page - Cree, Inc

Аналогичный номер детали - PTFB211503FL

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFB211503FL	734Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??2170 MHz Rev. 04, 2011-03-07
	PTFB211503FL	832Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 04.1, 2016-06-14
	PTFB211503FLV2R0	832Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 04.1, 2016-06-14
	PTFB211503FLV2R0XTMA1	832Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 04.1, 2016-06-14
	PTFB211503FLV2R250	832Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs Rev. 04.1, 2016-06-14

Аналогичное описание - PTFB211503FL

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFA210701E	387Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
	PTFB211501E	362Kb / 13P	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??2170 MHz Rev. 02, 2009-11-19
	PTFA210301E	198Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211001E	223Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110-2170 MHz Rev. 03, 2008-03-04
	PTFA211801E	583Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz Rev. 06, 2011-01-11
	PTFA212002E	227Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz Rev. 02, 2005-05-16
	PTFB211503EL	734Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ??2170 MHz Rev. 04, 2011-03-07
	PXFC211507SC	201Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2110 ??2170 MHz Rev. 02, 2015-03-03
	PTFB212507SH	193Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 ??2170 MHz Rev. 03, 2015-10-30
Cree, Inc	PTFB212503FL	553Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 2110 ??2170 MHz

О Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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