PTFB193404F датащи(PDF) - Cree, Inc

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PTFB193404F датащи (PDF) - Cree, Inc

PTFB193404F Datasheet PDF - Cree, Inc


номер детали	PTFB193404F

скачать	PTFB193404F скачать

объем файла	610.06 Kbytes

Page	14 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

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подробное описание детали

Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz

PTFB193404F Datasheet (PDF)

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PTFB193404F Datasheet PDF - Cree, Inc


номер детали	PTFB193404F

скачать	PTFB193404F Click to download

объем файла	610.06 Kbytes

Page	14 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

Logo

подробное описание детали	Thermally-Enhanced High Power RF LDMOS FET 340 W, 30 V, 1930 ??1990 MHz

PTFB193404F датащи (HTML) - Cree, Inc

PTFB193404F Datasheet HTML 1Page - Cree, Inc

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PTFB193404F Datasheet HTML 5Page - Cree, Inc

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PTFB193404F Datasheet HTML 7Page - Cree, Inc

PTFB193404F Datasheet HTML 8Page - Cree, Inc

PTFB193404F Datasheet HTML 9Page - Cree, Inc

PTFB193404F Datasheet HTML 10Page - Cree, Inc

Аналогичный номер детали - PTFB193404F

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFB193404F	244Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz Rev. 04, 2011-02-07
	PTFB193404F	665Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz Rev. 05.2, 2016-06-14
	PTFB193404FV1R0	665Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz Rev. 05.2, 2016-06-14
	PTFB193404FV1R0XTMA1	665Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz Rev. 05.2, 2016-06-14
	PTFB193404FV1R250	665Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz Rev. 05.2, 2016-06-14

Аналогичное описание - PTFB193404F

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFA192401E	431Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ??1990 MHz Rev. 02, 2009-04-01
	PTFB191501E	295Kb / 15P	Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ??1990 MHz Rev. 02, 2009-09-09
	PTFA190451E	375Kb / 10P	Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz Rev. 03.1, 2009-02-20
	PTFA191001E	256Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz Rev. 04, 2007-10-31
	PTFA192001E	285Kb / 11P	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz Rev. 05, 2008-05-15
	PTFB192503EL	673Kb / 15P	Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz Rev. 09, 2010-11-09
	PTFB193404F	244Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz Rev. 04, 2011-02-07
	PXFC192207FH	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ??1990 MHz Rev. 04.1, 2016-06-22
	PTFB193404F	665Kb / 14P	Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 ??1990 MHz Rev. 05.2, 2016-06-14
Cree, Inc	PTFB192503FL	531Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 1930 ??1990 MHz

О Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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