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C3M0030090K датащи (PDF) - Cree, Inc

C3M0030090K Datasheet PDF - Cree, Inc
номер детали C3M0030090K
скачать  C3M0030090K скачать
объем файла   1448.51 Kbytes
Page   11 Pages
производитель  CREE [Cree, Inc]
домашняя страница  http://www.cree.com/
Logo CREE - Cree, Inc
подробное описание детали Silicon Carbide Power MOSFET C3M MOSFET Technology

C3M0030090K Datasheet (PDF)

Go To PDF Page скачать датащи
C3M0030090K Datasheet PDF - Cree, Inc

номер детали C3M0030090K
скачать  C3M0030090K Click to download

объем файла   1448.51 Kbytes
Page   11 Pages
производитель  CREE [Cree, Inc]
домашняя страница  http://www.cree.com/
Logo CREE - Cree, Inc
подробное описание детали Silicon Carbide Power MOSFET C3M MOSFET Technology

C3M0030090K датащи (HTML) - Cree, Inc




Аналогичный номер детали - C3M0030090K

производительномер деталидатащиподробное описание детали
logo
WOLFSPEED, INC.
C3M0030090K WOLFSPEED-C3M0030090K Datasheet
1Mb / 11P
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 4, 01-2021
logo
Inchange Semiconductor ...
C3M0030090K ISC-C3M0030090K Datasheet
328Kb / 3P
SiC N-Channel MOSFET
More results


Аналогичное описание - C3M0030090K

производительномер деталидатащиподробное описание детали
logo
Cree, Inc
C3M0065100J CREE-C3M0065100J Datasheet
1Mb / 10P
Silicon Carbide Power MOSFET C3M MOSFET Technology
C3M0075120J CREE-C3M0075120J Datasheet
1Mb / 10P
Silicon Carbide Power MOSFET C3M MOSFET Technology
C3M0075120K CREE-C3M0075120K Datasheet
1Mb / 11P
Silicon Carbide Power MOSFET C3M MOSFET Technology
C3M0120100J CREE-C3M0120100J Datasheet
1Mb / 10P
Silicon Carbide Power MOSFET C3M MOSFET Technology
C3M0075120D CREE-C3M0075120D Datasheet
877Kb / 10P
Silicon Carbide Power MOSFET C3M MOSFET Technology
logo
WOLFSPEED, INC.
C3M0025065K WOLFSPEED-C3M0025065K Datasheet
1Mb / 13P
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 2, OCTOBER 2022
C3M0032120K WOLFSPEED-C3M0032120K Datasheet
1Mb / 12P
Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode
Rev. 3, 11-2020
CPM3-1200-0016A WOLFSPEED-CPM3-1200-0016A Datasheet
566Kb / 8P
Silicon Carbide Power MOSFET C3M TM MOSFET Technology Industry Leading Performance
Rev. 2, 01-2021
CPM3-1200-0021A WOLFSPEED-CPM3-1200-0021A Datasheet
471Kb / 7P
Silicon Carbide Power MOSFET C3M TM MOSFET Technology Industry Leading Performance
Rev. 1 01-2020
CPM3-1200-0075A WOLFSPEED-CPM3-1200-0075A Datasheet
420Kb / 7P
Silicon Carbide Power MOSFET C3M TM MOSFET Technology Industry Leading Performance
Rev. 2, 03-2020
More results




О Cree, Inc


Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.




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