| производитель | номер детали | датащи | подробное описание детали |
 Samsung semiconductor |
FMB857B
|
329Kb / 23P |
256Mb F-die DDR SDRAM Specification
|
|
K4H560838F-TC
|
171Kb / 19P |
256Mb F-die DDR400 SDRAM Specification
|
|
K4H560838F-UC
|
171Kb / 19P |
256Mb F-die DDR400 SDRAM Specification
|
|
K4H561638F-UC
|
206Kb / 23P |
256Mb F-die DDR SDRAM Specification
|
|
K4T56163QI
|
726Kb / 42P |
256Mb I-die DDR2 SDRAM Specification
|
 Hynix Semiconductor |
HY5PS56421LF-E3
|
614Kb / 35P |
256Mb DDR2 SDRAM
|
|
HY5PS561621BLFPE3
|
827Kb / 34P |
256Mb DDR2 SDRAM
|
|
HY5PS561621BLFPE3I
|
826Kb / 34P |
256Mb DDR2 SDRAM
|
 Samsung semiconductor |
K4T1G044QF
|
1Mb / 46P |
1Gb F-die DDR2 SDRAM
|
|
K4T1G084QF-BCE6000
|
1Mb / 46P |
1Gb F-die DDR2 SDRAM
|