| производитель | номер детали | датащи | подробное описание детали |

Toshiba Semiconductor
|
HN7G01FU |
185Kb/5P |
TOSHIBA Multi Chip Discrete Device |
| HN2E04F |
335Kb/8P |
TOSHIBA MULTI CHIP DISCRETE DEVICE |
| HN7G02FU |
163Kb/6P |
Multi Chip Discrete Device |
| HN2E05J |
250Kb/6P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E01F |
506Kb/7P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| HN2E04F |
523Kb/8P |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |

Littelfuse
|
P1200S_L |
146Kb/3P |
LCAS Asymmetrical Discrete Device |

Toshiba Semiconductor
|
HN4C05JU |
166Kb/3P |
MULTI CHIP DISCRETE DEVICE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS FOR MUTING AND SWITCHING APPLICATIONS) |
| TPCF8B01 |
81Kb/4P |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode |
| TPCP8J01 |
311Kb/9P |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type |
| TPCP8J01 |
189Kb/5P |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type |
| TPCF8B01 |
324Kb/9P |
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode |
| TH50VSF3583AASB |
548Kb/50P |
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS |
| TPCP8F01 |
248Kb/8P |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type |
| TB67B000AFG |
454Kb/31P |
TOSHIBA Bi-CMOS Power Integrated Circuit Multi-Chip Package (MCP) 2019-11-12 |
| TB67B000AHG |
455Kb/31P |
TOSHIBA Bi-CMOS Power Integrated Circuit Multi-Chip Package (MCP) 2019-05-30 |

Fuji Electric
|
MP2B5038 |
659Kb/2P |
A multi chip power device for a Multi-Oscillated Current Resonant type Converter |

Toshiba Semiconductor
|
TCD2560D |
285Kb/15P |
TOSHIBA CCD Image Sensor CCD (charge coupled device) |

SIRENZA MICRODEVICES
|
SLD-1026Z |
822Kb/21P |
3 Watt Discrete LDMOS Device Plastic Surface Mount Package |

Toshiba Semiconductor
|
TPD2015FN |
899Kb/17P |
Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit 2022- 03-15 |