шинаHere's a summary of the information provided in the datasheet:

Device Series: JAN Series of 2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, and 2N5667S power transistors.

Type: NPN Silicon Power Transistors

Key Features and Characteristics (Summarized by Category):

️· Voltage Ratings:
- Collector-Emitter Breakdown Voltage (V(BR)CER): 250-400V (depending on type)
- Emitter-Base Breakdown Voltage (V(BR)EBO): 6.0V
️· Current Ratings:
- Collector Cutoff Current (ICES): 0.2µA
- Collector-Base Cutoff Current (ICBO): 0.1-1.0µA (depending on type)
️· Switching Characteristics:
- Turn-On Time (ton): 0.25µs
- Turn-Off Time (toff): 1.5-2.0µs
️· Dynamic Characteristics:
- Forward Current Transfer Ratio (hFE): 5.0-120 (varies considerably based on test conditions and device type)
- Collector-Emitter Saturation Voltage (VCE(sat)): 0.4 - 1.0V (depends on type and base current)

- Base-Emitter Saturation Voltage (VBE(sat)): 1.2-1.5V
- Output Capacitance: 120pF
️· Safe Operating Area: Detailed information on test conditions and voltage/current values for safe operation.
️· Test Conditions: The datasheet specifies test conditions for various parameters (voltage, current, temperature) to ensure consistent results.
️· Pulse Test: Pulse width and duty cycle limitations are specified.

Important Notes:

️· Device Variations: The datasheet emphasizes that values change between the 2N5664, 2N5665, 2N5666, 2N5666S, 2N5667, and 2N5667S variants.
️· JAN Series: Specifies adherence to military specifications (JAN).



This summary should provide a good overview of the transistor's key properties and performance characteristics.