SSG4842N / SeCoS Halbleitertechnologie GmbH

SSG4842N Datasheet with Chat AI

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Part No.	SSG4842N_15
Manufacturer	SECOS
Size	121 Kbytes
Pages	2 pages
Description	N-Ch Enhancement Mode Power MOSFET

Datasheet Summary with AI

1. Device Identification

️· Part Number: SSG4842N
️· Description: N-Channel Enhancement Mode Power MOSFET
️· Key Specs (From the Title/Summary):
- 23A Continuous Drain Current
- 40V Drain-Source Voltage
- RDS(on) = 9 mΩ (typical, at VGS = 10V, ID = 23A)

2. Electrical Characteristics (Static)

Parameter Symbol Min Typ Max Unit Test Conditions

Gate Threshold Voltage VGS(th) 1 - - V VDS = VGS, ID = 250µA

Gate-Body Leakage IGSS - - 100 nA VDS = 0, VGS = 20V

Zero Gate Voltage Drain Current IDSS - - 1 µA VDS = 24V, VGS = 0

Zero Gate Voltage Drain Current (TJ=55C) IDSS - - 5 µA VDS = 24V, VGS = 0, TJ=55C

On-State Drain Current ID(on) 30 - - A VDS = 5V, VGS = 10V

Drain-Source On-Resistance RDS(on) - - 9 mΩ VGS = 10V, ID = 23A

Drain-Source On-Resistance RDS(on) - - 12 mΩ VGS = 4.5V, ID = 20A

Forward Transconductance gfs - 90 - S VDS = 15V, ID = 23A

Diode Forward Voltage VSD - 0.7 - V IS = 2.3A, VGS = 0

3. Electrical Characteristics (Dynamic)

Parameter Symbol Min Typ Max Unit Test Conditions

Total Gate Charge Qg - 25 - nC ID = 23A, VDS = 15V, VGS = 4.5V

Gate-Source Charge Qgs - 6 - -

Gate-Drain Charge Qgd - 9 - -

Turn-On Delay Time Td(on) - 20 - nS VDD = 15V, ID = 1A, VGEN = 10V, RL = 6Ω

Rise Time Tr - 13 - -

Turn-Off Delay Time Td(off) - 82 - -

Fall Time Tf - 43 - -

4. Notes:

️· Pulse Test: PW ≤ 300µs, duty cycle ≤ 2%
️· Guaranteed by Design: Some characteristics are not subject to production testing but are guaranteed based on design parameters.

5. Supplier/Document Info:

️· Document Revision: 13-Dec-2011 Rev. A
️· Supplier: Appears to be SeCoS GmbH (based on the website address).

In essence, this document provides the specifications needed to properly design circuits using the SSG4842N MOSFET.

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Gate Threshold Voltage	V<sub>GS(th)</sub>	1	-	-	V	V<sub>DS</sub> = V<sub>GS</sub>, I<sub>D</sub> = 250µA
Gate-Body Leakage	I<sub>GSS</sub>	-	-	100	nA	V<sub>DS</sub> = 0, V<sub>GS</sub> = 20V
Zero Gate Voltage Drain Current	I<sub>DSS</sub>	-	-	1	µA	V<sub>DS</sub> = 24V, V<sub>GS</sub> = 0
Zero Gate Voltage Drain Current (TJ=55C)	I<sub>DSS</sub>	-	-	5	µA	V<sub>DS</sub> = 24V, V<sub>GS</sub> = 0, TJ=55C
On-State Drain Current	I<sub>D(on)</sub>	30	-	-	A	V<sub>DS</sub> = 5V, V<sub>GS</sub> = 10V
Drain-Source On-Resistance	R<sub>DS(on)</sub>	-	-	9	mΩ	V<sub>GS</sub> = 10V, I<sub>D</sub> = 23A
Drain-Source On-Resistance	R<sub>DS(on)</sub>	-	-	12	mΩ	V<sub>GS</sub> = 4.5V, I<sub>D</sub> = 20A
Forward Transconductance	g<sub>fs</sub>	-	90	-	S	V<sub>DS</sub> = 15V, I<sub>D</sub> = 23A
Diode Forward Voltage	V<sub>SD</sub>	-	0.7	-	V	I<sub>S</sub> = 2.3A, V<sub>GS</sub> = 0

Parameter	Symbol	Min	Typ	Max	Unit	Test Conditions
Total Gate Charge	Q<sub>g</sub>	-	25	-	nC	I<sub>D</sub> = 23A, V<sub>DS</sub> = 15V, V<sub>GS</sub> = 4.5V
Gate-Source Charge	Q<sub>gs</sub>	-	6	-	-
Gate-Drain Charge	Q<sub>gd</sub>	-	9	-	-
Turn-On Delay Time	T<sub>d(on)</sub>	-	20	-	nS	V<sub>DD</sub> = 15V, I<sub>D</sub> = 1A, V<sub>GEN</sub> = 10V, R<sub>L</sub> = 6Ω
Rise Time	T<sub>r</sub>	-	13	-	-
Turn-Off Delay Time	T<sub>d(off)</sub>	-	82	-	-
Fall Time	T<sub>f</sub>	-	43	-	-