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EM610FV8T Datasheet with Chat AI
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  • Part No.EM610FV8T
    ManufacturerEMLSI
    Size188 Kbytes
    Pages11 pages
    Description128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
    Datasheet Summary with AI

    1. Overview and General Information

    ️· Device Type: Low Power SRAM (Static Random Access Memory)
    ️· Purpose: Designed for applications requiring high speed, low power consumption, and non-volatility.
    ️· Memory Organization: Offered in various configurations, including 1M, 2M, 4M, 8M, 16M, 32M, and 64M. The memory organization is flexible to allow x8, x16, or x32 bit data width.
    ️· Operating Voltages: Supports various voltages including 5V, 2.7V-3.6V, 3.0V, 2.5V, 2.0V, and 1.8V.

    2. Key Electrical Characteristics

    ️· Access Time: Offered in speeds of 45ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns.
    ️· Data Retention:
    - Requires a minimum VCC of 1.5V for data retention.
    - Data Retention Current is very low (≤0.25µA).
    ️· Power Consumption: Designed for low power operation.
    ️· Operating Temperature: (Not explicitly stated, but implied to be industrial temperature range)
    ️· Chip Disable: Features for efficient power management.

    3. Functional Characteristics

    ️· Memory Organization: 1M x 8 to 64M x 8 memory.
    ️· Dual or Single Chip Select (CS): Offers flexibility in system design.
    ️· Auto Refresh: (Implied, but not explicitly stated, typical of SRAMs)
    ️· Power-Down Feature: Designed for minimizing power dissipation during idle states.

    4. Package Options

    ️· FPBGA
    ️· 32 sTSOP1
    ️· 32 TSOP1
    ️· 44 TSOP2
    ️· Wafer

    5. Ordering Information / Part Number Decoding

    The datasheet includes a detailed part number decoding scheme. Here's a summarized breakdown:

    ️· EM610FV8T-XXXX (Example Part Number)
    - EM: Prefix indicating the manufacturer
    - 610: Series Designator
    - FV: Technology and Density
    - 8T: Package Designation

    The characters following this are for options such as speed, voltage, density, and revision.

    6. Timing Diagrams and Waveforms

    The document contains detailed timing diagrams for both read and write cycles, outlining critical parameters like access time, setup times, and hold times. There's also a data retention waveform.

    7. Functional Guide
    ️· Offers a guide to interpreting the part number and understanding the options/characteristics it represents.

    Important Notes and Assumptions:

    ️· Missing Information: Some specifics, like precise temperature ranges and full power consumption figures, may be found in the complete datasheet, as this document is a summary.
    ️· Standard SRAM Features: I'm assuming the presence of typical SRAM features like auto-refresh, based on the functionality described.
    ️· This summary is based solely on the provided text. A full datasheet would contain more details.

    1. Overview and General Information

    ️· Device Type: Low Power SRAM (Static Random Access Memory)
    ️· Purpose: Designed for applications requiring high speed, low power consumption, and non-volatility.
    ️· Memory Organization: Offered in various configurations, including 1M, 2M, 4M, 8M, 16M, 32M, and 64M. The memory organization is flexible to allow x8, x16, or x32 bit data width.
    ️· Operating Voltages: Supports various voltages including 5V, 2.7V-3.6V, 3.0V, 2.5V, 2.0V, and 1.8V.

    2. Key Electrical Characteristics

    ️· Access Time: Offered in speeds of 45ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns, 55ns.
    ️· Data Retention:
    - Requires a minimum VCC of 1.5V for data retention.
    - Data Retention Current is very low (≤0.25µA).
    ️· Power Consumption: Designed for low power operation.
    ️· Operating Temperature: (Not explicitly stated, but implied to be industrial temperature range)
    ️· Chip Disable: Features for efficient power management.

    3. Functional Characteristics

    ️· Memory Organization: 1M x 8 to 64M x 8 memory.
    ️· Dual or Single Chip Select (CS): Offers flexibility in system design.
    ️· Auto Refresh: (Implied, but not explicitly stated, typical of SRAMs)
    ️· Power-Down Feature: Designed for minimizing power dissipation during idle states.

    4. Package Options

    ️· FPBGA
    ️· 32 sTSOP1
    ️· 32 TSOP1
    ️· 44 TSOP2
    ️· Wafer

    5. Ordering Information / Part Number Decoding

    The datasheet includes a detailed part number decoding scheme. Here's a summarized breakdown:

    ️· EM610FV8T-XXXX (Example Part Number)
    - EM: Prefix indicating the manufacturer
    - 610: Series Designator
    - FV: Technology and Density
    - 8T: Package Designation

    The characters following this are for options such as speed, voltage, density, and revision.

    6. Timing Diagrams and Waveforms

    The document contains detailed timing diagrams for both read and write cycles, outlining critical parameters like access time, setup times, and hold times. There's also a data retention waveform.

    7. Functional Guide
    ️· Offers a guide to interpreting the part number and understanding the options/characteristics it represents.

    Important Notes and Assumptions:

    ️· Missing Information: Some specifics, like precise temperature ranges and full power consumption figures, may be found in the complete datasheet, as this document is a summary.
    ️· Standard SRAM Features: I'm assuming the presence of typical SRAM features like auto-refresh, based on the functionality described.
    ️· This summary is based solely on the provided text. A full datasheet would contain more details.

    Part No.EM610FV8T
    ManufacturerEMLSI
    Size188 Kbytes
    Pages11 pages
    Description128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
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