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Hello, Please ask a question about 2SA949 Datasheet
# Example questions:
➢ Within what temperature range can this transistor be safely stored?
➢ What is the maximum continuous collector current (ic) this transistor can handle?
➢ How does the collector-emitter saturation voltage (vce(sat)) change with a collector current of -10ma and a base current of -1ma?
# 2SA949 isc Silicon PNP Power Transistor
## Description
· Designed for power amplifier, high-speed switching, and regulated power supply applications.
· Collector-Emitter Breakdown Voltage: -V(BR)CEO = -150V (Min)
· Collector-Emitter Saturation Voltage: -VCE(sat) = -0.8V (Max) @ IC = -10mA
## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-Base Voltage): -150 V
· VCEO (Collector-Emitter Voltage): -150 V
· VEBO (Emitter-Base Voltage): -5 V
· IC (Collector Current-Continuous): -50 mA
· IB (Base Current): -5 mA
· PC (Collector Power Dissipation, TC=25℃): 800 mW
· Tj (Junction Temperature): 150 ℃
· Tstg (Storage Temperature Range): -55~150 ℃
## Electrical Characteristics (TC=25℃ unless otherwise specified)
· VEB (Emitter-Base Voltage): -0.9 V @ VCE=-5V; IC= -30mA
· VCE(sat) (Collector-Emitter Saturation Voltage): -0.8 V @ IC=-10mA, IB=-1mA
· ICBO (Collector Cutoff Current): -0.1 uA @ VCB=-150V; IE=0
· IEBO (Emitter Cutoff Current): -0.1 uA @ VEB =-5V; IC= 0
· hFE (DC Current Gain): 70-240 @ IC=-10mA; VCE=-5V
· COB (Output Capacitance): 4.0-5.0 pF @ IE=0; VCB=-10V; f=1MHz
· fT (Current-Gain—Bandwidth Product): 120 MHz @ IC=-10mA; VCE=-30V
## Disclaimer
· Intended for general electronic equipment applications.
· Not designed for equipment requiring specialized quality/reliability or hazardous environments.
· ISC disclaims any liability arising from the application or use of this product.
# 2SA949 isc Silicon PNP Power Transistor
## Description
· Designed for power amplifier, high-speed switching, and regulated power supply applications.
· Collector-Emitter Breakdown Voltage: -V(BR)CEO = -150V (Min)
· Collector-Emitter Saturation Voltage: -VCE(sat) = -0.8V (Max) @ IC = -10mA
## Absolute Maximum Ratings (Ta=25℃)
· VCBO (Collector-Base Voltage): -150 V
· VCEO (Collector-Emitter Voltage): -150 V
· VEBO (Emitter-Base Voltage): -5 V
· IC (Collector Current-Continuous): -50 mA
· IB (Base Current): -5 mA
· PC (Collector Power Dissipation, TC=25℃): 800 mW
· Tj (Junction Temperature): 150 ℃
· Tstg (Storage Temperature Range): -55~150 ℃
## Electrical Characteristics (TC=25℃ unless otherwise specified)
· VEB (Emitter-Base Voltage): -0.9 V @ VCE=-5V; IC= -30mA
· VCE(sat) (Collector-Emitter Saturation Voltage): -0.8 V @ IC=-10mA, IB=-1mA
· ICBO (Collector Cutoff Current): -0.1 uA @ VCB=-150V; IE=0
· IEBO (Emitter Cutoff Current): -0.1 uA @ VEB =-5V; IC= 0
· hFE (DC Current Gain): 70-240 @ IC=-10mA; VCE=-5V
· COB (Output Capacitance): 4.0-5.0 pF @ IE=0; VCB=-10V; f=1MHz
· fT (Current-Gain—Bandwidth Product): 120 MHz @ IC=-10mA; VCE=-30V
## Disclaimer
· Intended for general electronic equipment applications.
· Not designed for equipment requiring specialized quality/reliability or hazardous environments.
· ISC disclaims any liability arising from the application or use of this product.
| Part No. | 2SA949 |
| Manufacturer | ISC |
| Size | 269 Kbytes |
| Pages | 2 pages |
| Description | isc Silicon PNP Power Transistor |
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