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  • Part No.2SA949
    ManufacturerISC
    Size269 Kbytes
    Pages2 pages
    Descriptionisc Silicon PNP Power Transistor
    Datasheet Summary with AI

    # 2SA949 isc Silicon PNP Power Transistor

    ## Description
    · Designed for power amplifier, high-speed switching, and regulated power supply applications.
    · Collector-Emitter Breakdown Voltage: -V(BR)CEO = -150V (Min)
    · Collector-Emitter Saturation Voltage: -VCE(sat) = -0.8V (Max) @ IC = -10mA

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO (Collector-Base Voltage): -150 V
    · VCEO (Collector-Emitter Voltage): -150 V
    · VEBO (Emitter-Base Voltage): -5 V
    · IC (Collector Current-Continuous): -50 mA
    · IB (Base Current): -5 mA
    · PC (Collector Power Dissipation, TC=25℃): 800 mW
    · Tj (Junction Temperature): 150 ℃
    · Tstg (Storage Temperature Range): -55~150 ℃

    ## Electrical Characteristics (TC=25℃ unless otherwise specified)
    · VEB (Emitter-Base Voltage): -0.9 V @ VCE=-5V; IC= -30mA
    · VCE(sat) (Collector-Emitter Saturation Voltage): -0.8 V @ IC=-10mA, IB=-1mA

    · ICBO (Collector Cutoff Current): -0.1 uA @ VCB=-150V; IE=0
    · IEBO (Emitter Cutoff Current): -0.1 uA @ VEB =-5V; IC= 0
    · hFE (DC Current Gain): 70-240 @ IC=-10mA; VCE=-5V
    · COB (Output Capacitance): 4.0-5.0 pF @ IE=0; VCB=-10V; f=1MHz
    · fT (Current-Gain—Bandwidth Product): 120 MHz @ IC=-10mA; VCE=-30V

    ## Disclaimer
    · Intended for general electronic equipment applications.
    · Not designed for equipment requiring specialized quality/reliability or hazardous environments.
    · ISC disclaims any liability arising from the application or use of this product.

    # 2SA949 isc Silicon PNP Power Transistor

    ## Description
    · Designed for power amplifier, high-speed switching, and regulated power supply applications.
    · Collector-Emitter Breakdown Voltage: -V(BR)CEO = -150V (Min)
    · Collector-Emitter Saturation Voltage: -VCE(sat) = -0.8V (Max) @ IC = -10mA

    ## Absolute Maximum Ratings (Ta=25℃)
    · VCBO (Collector-Base Voltage): -150 V
    · VCEO (Collector-Emitter Voltage): -150 V
    · VEBO (Emitter-Base Voltage): -5 V
    · IC (Collector Current-Continuous): -50 mA
    · IB (Base Current): -5 mA
    · PC (Collector Power Dissipation, TC=25℃): 800 mW
    · Tj (Junction Temperature): 150 ℃
    · Tstg (Storage Temperature Range): -55~150 ℃

    ## Electrical Characteristics (TC=25℃ unless otherwise specified)
    · VEB (Emitter-Base Voltage): -0.9 V @ VCE=-5V; IC= -30mA
    · VCE(sat) (Collector-Emitter Saturation Voltage): -0.8 V @ IC=-10mA, IB=-1mA
    · ICBO (Collector Cutoff Current): -0.1 uA @ VCB=-150V; IE=0
    · IEBO (Emitter Cutoff Current): -0.1 uA @ VEB =-5V; IC= 0
    · hFE (DC Current Gain): 70-240 @ IC=-10mA; VCE=-5V
    · COB (Output Capacitance): 4.0-5.0 pF @ IE=0; VCB=-10V; f=1MHz
    · fT (Current-Gain—Bandwidth Product): 120 MHz @ IC=-10mA; VCE=-30V

    ## Disclaimer
    · Intended for general electronic equipment applications.
    · Not designed for equipment requiring specialized quality/reliability or hazardous environments.
    · ISC disclaims any liability arising from the application or use of this product.

    Part No.2SA949
    ManufacturerISC
    Size269 Kbytes
    Pages2 pages
    Descriptionisc Silicon PNP Power Transistor
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