# CSD1833 NPN Silicon Epitaxial Power Transistor

## General Description

️· NPN Silicon Epitaxial Power Transistor
️· TO-220 Package
️· Designed for Low Frequency Power Amplifier applications
️· Marking: CSD1833D, CSD1833E, CSD1833F

## Absolute Maximum Ratings

️· Collector-Base Voltage (VCBO): 100 V
️· Collector-Emitter Voltage (VCEO): 80 V
️· Emitter-Base Voltage (VEBO): 5 V
️· Collector Current (DC): 7 A (Pulse 10 A)
️· Collector Power Dissipation (Ta=25°C): 2 W (Tc=25°C 30 W)
️· Junction Temperature (Tj): 150 °C
️· Storage Temperature Range (Tstg): -55 to +150 °C

## Electrical Characteristics

️· Collector Emitter Voltage (VCEO): 80 V (Ic=1mA, Ib=0)
️· Collector Base Voltage (VCBO): 100 V (Ic=50uA, IE=0)
️· Emitter Base Voltage (VEBO): 5 V (IE=50uA, IC=0)
️· Collector Cutoff Current (ICBO): ≤ 10 uA (VCB=100V, IE=0)
️· Collector-Emitter Saturation Voltage (VCE(sat)): ≤ 1 V (Ic=4A, Ib=0.4A)
️· Base-Emitter Saturation Voltage (VBE(sat)): ≤ 1.5 V (Ic=4A, Ib=0.4A)
️· DC Current Gain (hFE): 60 - 320 (Ic=1A, VCE=5V)
️· Transition Frequency (ft): ≥ 5 MHz (VCE=5V, Ic=50mA)
️· Collector Output Capacitance (Cob): ≤ 150 pF (VCB=10V, IE=0)

## Pin Configuration

️· 1: Base
️· 2: Collector
️· 3: Emitter
️· 4: Collector

## Packaging & Ordering

️· TO-220 Plastic Package
️· Tube Packing: 50 pcs per tube
️· Polybag: 200 pcs/polybag
️· Inner Carton: 1000 pcs
️· Outer Carton: 5000 pcs