# IRFPC50A, SiHFPC50A Power MOSFET

## Features
· Low Gate Charge (Qg) for simple drive requirements
· Improved ruggedness (Gate, Avalanche, dV/dt)
· Fully characterized capacitance & avalanche ratings
· Effective Coss specified
· RoHS compliant

## Product Summary
· VDS (Drain-Source Voltage): 600V
· RDS(on) (On-State Resistance): 0.58 Ω (VGS = 10V)
· Qg (Total Gate Charge): 70nC
· Configuration: Single N-Channel MOSFET
· Package: TO-247AC

## Absolute Maximum Ratings
· Continuous Drain Current (TC = 25°C): 11A
· Pulsed Drain Current: 44A
· Single Pulse Avalanche Energy: 920mJ
· Maximum Power Dissipation (TC = 25°C): 180W
· Operating/Storage Temperature: -55°C to +150°C

## Thermal Resistance
· RthJA (Junction-to-Ambient): 40°C/W
· RthCS (Case-to-Sink): 0.24°C/W
· RthJC (Junction-to-Case): 0.65°C/W

## Typical Specifications (TJ = 25°C)
· VDS(th) (Drain-Source Threshold Voltage): 2.0 - 4.0V
· Forward Transconductance (gfs): 7.7S
· Input Capacitance (Ciss): 2100pF
· Output Capacitance (Coss): 270pF
· Turn-On Delay (td(on)): 15ns
· Body Diode Forward Voltage (VSD): 1.4V @ IS = 11A

## Ordering Information
· IRFPC50APbF: Lead-free
· SiHFPC50A-E3: Lead-free
· IRFPC50A: SnPb
· SiHFPC50A: SnPb