IXTK102N30P / Inchange Semiconductor Company Limited

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Part No.	IXTK102N30P
Manufacturer	ISC
Size	194 Kbytes
Pages	2 pages
Description	Isc N-Channel MOSFET Transistor

Datasheet Summary with AI

# Isc N-Channel MOSFET Transistor IXTK102N30P

## Features

· To-3PL package
· Low input capacitance & gate charge
· Low gate input resistance
· 100% avalanche tested
· Robust device performance & reliable operation

## Absolute Maximum Ratings (Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VDSS Drain-Source Voltage 300 V

VGSS Gate-Source Voltage ±30 V

ID Drain Current - Continuous 102 A

IDM Drain Current - Single Pulsed 250 A

PD Total Dissipation @TC=25℃ 700 W

Tch Max. Operating Junction Temperature 150 ℃

Tstg Storage Temperature -55~150 ℃

## Thermal Characteristics

SYMBOL PARAMETER MAX UNIT

Rth(ch-c) Channel-to-case thermal resistance 0.18 ℃/W

Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃/W

## Electrical Characteristics (TC=25℃)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT

BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA 300 V

VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.5mA 2.5 5.0 V

RDS(on) Drain-Source On-Resistance VGS=10V; ID=51A 33 mΩ

IGSS Gate-Source Leakage Current VGS=±20V; VDS=0V ±0.2 μA

IDSS Drain-Source Leakage Current VDS=300V; VGS=0V; Tj=25℃<br>VDS=300V; VGS=0V; Tj=150℃ 25<br>250 μA

VSDF Diode forward voltage ISD=102A, VGS = 0 V 1.5 V

isc website: www.iscsemi.cn

SYMBOL	PARAMETER	VALUE	UNIT
VDSS	Drain-Source Voltage	300	V
VGSS	Gate-Source Voltage	±30	V
ID	Drain Current - Continuous	102	A
IDM	Drain Current - Single Pulsed	250	A
PD	Total Dissipation @TC=25℃	700	W
Tch	Max. Operating Junction Temperature	150	℃
Tstg	Storage Temperature	-55~150	℃

SYMBOL	PARAMETER	MAX	UNIT
Rth(ch-c)	Channel-to-case thermal resistance	0.18	℃/W
Rth(ch-a)	Channel-to-ambient thermal resistance	62	℃/W

SYMBOL	PARAMETER	CONDITIONS	MIN	MAX	UNIT
BVDSS	Drain-Source Breakdown Voltage	VGS=0V; ID=0.25mA	300		V
VGS(th)	Gate Threshold Voltage	VDS=VGS; ID=0.5mA	2.5	5.0	V
RDS(on)	Drain-Source On-Resistance	VGS=10V; ID=51A		33	mΩ
IGSS	Gate-Source Leakage Current	VGS=±20V; VDS=0V		±0.2	μA
IDSS	Drain-Source Leakage Current	VDS=300V; VGS=0V; Tj=25℃<br>VDS=300V; VGS=0V; Tj=150℃		25<br>250	μA
VSDF	Diode forward voltage	ISD=102A, VGS = 0 V		1.5	V