The **IMT2AL-AG6-R** is a specific surface-mount electronic component manufactured by **ROHM Semiconductor**. It belongs to the category of **General Purpose Transistors**, specifically featuring a dual-structure configuration. --- ### 1. General Overview The IMT2AL-AG6-R is an integrated device containing **two PNP Silicon Epitaxial Planar Transistors** housed within a single small-outline package. This configuration is often used to save board space in high-density electronic designs. ### 2. Technical Specifications Below are the key electrical characteristics and absolute maximum ratings: | Parameter | Symbol | Value | Unit | | :--- | :--- | :--- | :--- | | **Collector-Base Voltage** | $V_{CBO}$ | -60 | V | | **Collector-Emitter Voltage** | $V_{CEO}$ | -50 | V | | **Emitter-Base Voltage** | $V_{EBO}$ | -6 | V | | **Collector Current** | $I_C$ | -150 | mA | | **Power Dissipation** | $P_D$ | 300 (Total) | mW | | **Junction Temperature** | $T_j$ | 150 | °C | | **Package Type** | SOT-457 | SMT6 | - | --- ### 3. Pin Configuration and Internal Structure The device uses an **SMT6 (Small Mark Transistor 6-pin)** package. The internal circuit consists of two independent PNP transistors. ```text Pin Layout (SMT6) +---+---+---+ | 6 | 5 | 4 | (Top View) +-----------+ | 1 | 2 | 3 | +---+---+---+ 1: Emitter (Tr1) 6: Collector (Tr1) 2: Base (Tr1) 5: Collector (Tr2) 3: Emitter (Tr2) 4: Base (Tr2) ``` ### 4. Key Features * **Dual Transistor Design:** Reduces the number of components and the mounting area required on the PCB. * **High Reliability:** Designed for general-purpose switching and amplification. * **Complementary Part:** Often paired with the **IMX2** (which contains two NPN transistors). ### 5. Common Applications * **Signal Switching:** Low-current switching in consumer electronics. * **Interface Circuits:** Level shifting and driving small loads. * **Amplification:** Small-signal audio or frequency amplification. * **Automotive/Industrial:** Used in modules where space is a constraint. ---