| производитель | номер детали | датащи | подробное описание детали |
Siemens Semiconductor G... |
TLE4945L
|
264Kb/15P |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
|
Infineon Technologies A... |
TLE4945L
|
99Kb/15P |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
2000-07-01 |
|
TLE4945L
|
507Kb/20P |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
V1.5, Nov. 2007 |
|
TLE4945L
|
507Kb/20P |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
V1.5, Nov. 2007 |
|
TLE4945LHALA1
|
507Kb/20P |
Uni- and Bipolar Hall IC Switches for Magnetic Field Applications
V1.5, Nov. 2007 |
|
TLE4946-1L
|
667Kb/17P |
High Precision Bipolar Hall-Effect Latch
Rev 1.2, December 2008 |
|
TLE4946-1L
|
904Kb/20P |
High Precision Bipolar Hall-Effect Latch
V 1.1, October 2005 |
|
TLE4946-1L
|
156Kb/9P |
High Precision Hall-Effect Switch
2004-03-04 |
|
TLE4946-1L
|
667Kb/17P |
High Precision Bipolar Hall-Effect Latch
Rev 1.2, December 2008 |
|
TLE4946-2K
|
1Mb/12P |
High Precision Hall Effect Latch
September 2008 Rev.1.0 |
|
TLE4946-2L
|
1,023Kb/12P |
High Precision Hall Effect Latch
June 2008 Rev 1.0 |
|
TLE4946H
|
147Kb/9P |
High Precision Hall-Effect Switch
2003-11-20 |
|
TLE4946H
|
904Kb/20P |
High Precision Bipolar Hall-Effect Latch
V 1.1, October 2005 |
|
TLE4946H
|
904Kb/20P |
High Precision Bipolar Hall-Effect Latch
V 1.1, October 2005 |
|
TLE4946K
|
703Kb/19P |
High Precision Bipolar Hall-Effect Latch
Rev 1.0, September 2007 |
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