производитель | номер детали | датащи | подробное описание детали |
Renesas Technology Corp |
HAT2285WP-EL-E
|
130Kb/10P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
HAT2285WP-EL-E
|
115Kb/10P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
HAT2285WP
|
115Kb/10P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
HAT2280R
|
136Kb/2P |
Power MOSFETs and IGBT for PDP
|
SHENZHEN DOINGTER SEMIC... |
HAT2280R
|
1Mb/4P |
Dual N-Channel MOSFET uses advanced trench technology
|
Renesas Technology Corp |
HAT2280R
|
98Kb/6P |
Silicon N Channel Power MOSFET
|
HAT2280R-EL-E
|
98Kb/6P |
Silicon N Channel Power MOSFET
|
HAT2281C
|
83Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2281C
|
88Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2281C-EL-E
|
83Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2281C
|
88Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2282C
|
83Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2287WP
|
57Kb/4P |
Silicon N Channel Power MOS FET Power Switching
|
HAT2287WP-EL-E
|
57Kb/4P |
Silicon N Channel Power MOS FET Power Switching
|
HAT2287WP
|
76Kb/6P |
Silicon N Channel Power MOS FET Power Switching
|