производитель | номер детали | датащи | подробное описание детали |
Renesas Technology Corp |
HAT2215RJ
|
111Kb/8P |
Silicon N Channel Power MOS FET High Speed Power Switching
|
HAT2215RJ-EL-E
|
111Kb/8P |
Silicon N Channel Power MOS FET High Speed Power Switching
|
HAT2215R
|
135Kb/10P |
Silicon N Channel Power MOS FET High Speed Power Switching
|
HAT2215R
|
157Kb/9P |
Silicon N Channel Power MOSFET
|
HAT2210R
|
116Kb/12P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
HAT2210R-EL-E
|
178Kb/12P |
Silicon N Channel Power MOSFET with Schottky Barrier Diode
|
HAT2210R-EL-E
|
116Kb/12P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
HAT2210RJ
|
116Kb/12P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
HAT2210RJ-EL-E
|
116Kb/12P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
HAT2210R
|
178Kb/12P |
Silicon N Channel Power MOSFET with Schottky Barrier Diode
|
HAT2217C
|
123Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2217C
|
147Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2217C-EL-E
|
147Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2217C
|
123Kb/7P |
Silicon N Channel MOS FET Power Switching
|
HAT2218R
|
139Kb/10P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|
SHENZHEN DOINGTER SEMIC... |
HAT2218R
|
1Mb/4P |
Dual N-Channel MOSFET uses advanced trench technology
|
Renesas Technology Corp |
HAT2218R-EL-E
|
139Kb/10P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
|