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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L443CC датащи(PDF) 125 Page - STMicroelectronics |
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STM32L443CC датащи(HTML) 125 Page - STMicroelectronics |
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125 / 207 page  DocID028739 Rev 2 125/207 STM32L443CC STM32L443RC STM32L443VC Electrical characteristics 177 Figure 25. HSI48 frequency versus temperature Low-speed internal (LSI) RC oscillator NT jitter Next transition jitter Accumulated jitter on 28 cycles(4) -- +/-0.15(2) -ns PT jitter Paired transition jitter Accumulated jitter on 56 cycles(4) -- +/-0.25(2) -ns 1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. Jitter measurement are performed without clock source activated in parallel. Table 48. HSI48 oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 49. LSI oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fLSI LSI Frequency VDD = 3.0 V, TA = 30 °C 31.04 - 32.96 kHz VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34 tSU(LSI)(2) LSI oscillator start- up time -- 80 130 μs tSTAB(LSI)(2) LSI oscillator stabilization time 5% of final frequency - 125 180 μs IDD(LSI)(2) LSI oscillator power consumption -- 110 180 nA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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