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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F411CC датащи(PDF) 101 Page - STMicroelectronics |
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STM32F411CC датащи(HTML) 101 Page - STMicroelectronics |
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101 / 149 page  DocID026289 Rev 6 101/149 STM32F411xC STM32F411xE Electrical characteristics 123 Input/output AC characteristics The definition and values of input/output AC characteristics are given in Figure 31 and Table 55, respectively. Unless otherwise specified, the parameters given in Table 55 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 14. Table 55. I/O AC characteristics(1)(2) OSPEEDRy [1:0] bit value(1) Symbol Parameter Conditions Min Typ Max Unit 00 fmax(IO)out Maximum frequency(3) CL = 50 pF, VDD ≥ 2.70 V - - 4 MHz CL = 50 pF, VDD≥ 1.7 V - - 2 CL = 10 pF, VDD ≥ 2.70 V - - 8 CL = 10 pF, VDD ≥ 1.7 V - - 4 tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 50 pF, VDD = 1.7 V to 3.6 V -- 100 ns 01 fmax(IO)out Maximum frequency(3) CL = 50 pF, VDD ≥ 2.70 V - - 25 MHz CL = 50 pF, VDD ≥ 1.7 V - - 12.5 CL = 10 pF, VDD ≥ 2.70 V - - 50 CL = 10 pF, VDD ≥ 1.7 V - - 20 tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 50 pF, VDD ≥2.7 V - - 10 ns CL = 50 pF, VDD ≥ 1.7 V - - 20 CL = 10 pF, VDD ≥ 2.70 V - - 6 CL = 10 pF, VDD ≥ 1.7 V - - 10 10 fmax(IO)out Maximum frequency(3) CL = 40 pF, VDD ≥ 2.70 V - - 50(4) MHz CL = 40 pF, VDD ≥ 1.7 V - - 25 CL = 10 pF, VDD ≥ 2.70 V - - 100(4) CL = 10 pF, VDD ≥ 1.7 V - - 50(4) tf(IO)out/ tr(IO)out Output high to low level fall time and output low to high level rise time CL = 40 pF, VDD≥ 2.70 V - - 6 ns CL = 40 pF, VDD≥ 1.7 V - - 10 CL = 10 pF, VDD≥ 2.70 V - - 4 CL = 10 pF, VDD≥ 1.7 V - - 6 |
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