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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F413CG датащи(PDF) 112 Page - STMicroelectronics |
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STM32F413CG датащи(HTML) 112 Page - STMicroelectronics |
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112 / 207 page  Electrical characteristics STM32F413xG/H 112/207 DocID029162 Rev 2 6.3.9 Internal clock source characteristics The parameters given in Table 44 and Table 45 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 16. High-speed internal (HSI) RC oscillator L Figure 31. ACCHSI versus temperature 1. Guaranteed by characterization. Table 44. HSI oscillator characteristics (1) 1. VDD = 3.3 V, TA = –40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user trimming step(2) 2. Guaranteed by design -- - 1 % Accuracy of the HSI oscillator TA = – 40 to 125 °C(3) 3. Based on characterization –8 - 6.75 % TA = – 40 to 105 °C(3) –8 - 4.5 % TA = –10 to 85 °C(3) –4 - 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. –1 - 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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