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UCS1002-1 датащи(PDF) 113 Page - Microchip Technology

номер детали UCS1002-1
подробное описание детали  Programmable USB Port Power Controller with Charger Emulation
PDF  116 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

UCS1002-1 датащи(HTML) 113 Page - Microchip Technology

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Programmable USB Port Power Controller with Charger Emulation
Datasheet
SMSC UCS1002
113
Revision 1.4 (07-16-13)
DATASHEET
Chapter 2, Pin Description
Changed “unused connection” to n/a for COMM_SEL / ILIM,
SEL, SMDATA / LATCH, and SMCLK / S0 pins as they must
be used.
Added Note 2.1: Total leakage current from pins 3 and 4
(VBUS) to ground must be less than 100 µA for proper attach
/ removal detection operation.
Added Note 2.2: It is recommended to use 2 M
Ω pull-down
resistors on the DPOUT and / or DMOUT pin if a portable
device stimulus is expected when using the Custom charger
emulation profile with the high-speed data switch open. The
2 M
Ω value is based on BC1.1 impedance characteristics for
Dedicated Charging Ports.
Table 3.3, "Electrical
Specifications"
IDET_QUAL changed from 200 µA to 400 µA.
IREM_QUAL_DET changed from 200 µA to 400 µA.
IREM_QUAL_ACT changed from 100 µA to 300 µA.
Updated selectable current limits (ILIMx) min and max values.
Typical values did not change.
Changed IACTIVE from 500 µA (TYP) to 650 µA (TYP).
Changed IACTIVE from TBD µA (MAX) to 750 µA (MAX).
Changed ISLEEP from TBD µA (MAX) to 8 µA (MAX).
Changed IDETECT from 190 µA (TYP) to 185 µA (TYP).
Changed IDETECT from TBD µA (MAX) to 220 µA (MAX).
Removed VS_OV MIN value (5.6 V) and MAX value (TBD).
Changed RON_PSW from 70 mΩ (MAX) to 65 mΩ (MAX).
Changed ILEAK_VS from TBD µA (MAX) to 5 µA (MAX).
Changed ILEAK_BYP from 0.5 µA (MAX) to 3 µA (MAX).
Changed IBD_1 from 2 µA (MAX) to 3 µA (MAX).
Section 4.1, "Operating
Mode"
Added. Moved Table 4.1, "UCS1002 Communication Mode
and ILIM Selection" here (it was in Section 4.3, "Stand-alone
Operating Mode").
Table 5.1, "Power States
Control Settings"
“Behavior” cell in the "Sleep" row: Clarified behavior by
adding "VBUS will be near ground potential”.
Section 5.1.2, "Sleep State
Operation"
Clarified behavior by adding "VBUS will be near ground
potential”.
Section 5.2.3, "Back-voltage
Detection" and Section
5.2.4, "Back-drive Current
Protection"
Section “Back-voltage / Back-drive Detection” split into two.
In Section 5.2.4, "Back-drive Current Protection", corrected
reference IBD_LK to match elec spec symbol IBD_1 and
rewrote back-drive description.
Section 7.2.4, "Current
Limiting Modes"
Added: The current limiting mode used depends on the Active
state mode (see Section 9.9, "Current Limit Mode
Associations").
Section 7.2.4.1, "Trip Mode"
Added application note: To avoid cycling in trip mode, set ILIM
higher than the highest expected portable device current
draw.
Table 14.1 Customer Revision History (continued)
REVISION
LEVEL & DATE
SECTION/FIGURE/ENTRY
CORRECTION



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