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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L475RG датащи(PDF) 115 Page - STMicroelectronics |
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STM32L475RG датащи(HTML) 115 Page - STMicroelectronics |
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115 / 193 page  DocID027692 Rev 2 115/193 STM32L475xx Electrical characteristics 181 6.3.8 Internal clock source characteristics The parameters given in Table 48 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 22: General operating conditions. The provided curves are characterization results, not tested in production. High-speed internal (HSI16) RC oscillator Table 48. HSI16 oscillator characteristics(1) Symbol Parameter Conditions Min Typ Max Unit fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz TRIM HSI16 user trimming step Trimming code is not a multiple of 64 0.2 0.3 0.4 % Trimming code is a multiple of 64 -4 -6 -8 DuCy(HSI16)(2) Duty Cycle - 45 - 55 % ∆Temp(HSI16) HSI16 oscillator frequency drift over temperature TA= 0 to 85 °C -1 - 1 % TA= -40 to 125 °C -2 - 1.5 % ∆VDD(HSI16) HSI16 oscillator frequency drift over VDD VDD=1.62 V to 3.6 V -0.1 - 0.05 % tsu(HSI16)(2) HSI16 oscillator start-up time -- 0.8 1.2 μs tstab(HSI16)(2) HSI16 oscillator stabilization time -- 3 5 μs IDD(HSI16)(2) HSI16 oscillator power consumption - - 155 190 μA 1. Guaranteed by characterization results. 2. Guaranteed by design. |
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