STM32F429NE datasheet(105/239 Pages) STMICROELECTRONICS

номер детали	STM32F429NE

подробное описание детали	ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT

PDF	239 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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105 / 239 page

DocID024030 Rev 9

105/238

STM32F427xx STM32F429xx

Electrical characteristics

197

Table 28. Typical and maximum current consumptions in Standby mode

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA = 25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

VDD =

1.7 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.6 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM ON, low-speed

oscillator (LSE) and RTC ON

2.80

3.00

3.60

7.00

19.00

36.00

µA

Backup SRAM OFF, low-

speed oscillator (LSE) and

RTC ON

2.30

2.60

3.10

6.00

16.00

31.00

Backup SRAM ON, RTC and

LSE OFF

2.30

2.50

2.90

6.00(3) 18.00(3) 35.00(3)

Backup SRAM OFF, RTC and

LSE OFF

1.70

1.90

2.20

5.00(3) 15.00(3) 30.00(3)

1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset

OFF), the typical current consumption is reduced by additional 1.2 µA.

2. Based on characterization, not tested in production unless otherwise specified.

3. Based on characterization, tested in production.

Table 29. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA = 85 °C

TA =

105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain supply

current

Backup SRAM ON, low-speed

oscillator (LSE) and RTC ON

1.28

1.40

1.62

µA

Backup SRAM OFF, low-speed

oscillator (LSE) and RTC ON

0.66

0.76

0.97

Backup SRAM ON, RTC and

LSE OFF

0.70

0.72

0.74

Backup SRAM OFF, RTC and

LSE OFF

0.10

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Guaranteed by characterization results.

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