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STM32F745VG датащи(PDF) 134 Page - STMicroelectronics

номер детали STM32F745VG
подробное описание детали  ARM-based Cortex-M7 32b MCUFPU, 462DMIPS, up to 1MB Flash/32016 4KB RAM, USB OTG HS/FS, ethernet, 18 TIMs, 3 ADCs, 25 com itf, cam & LCD
PDF  227 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F745VG датащи(HTML) 134 Page - STMicroelectronics

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Electrical characteristics
STM32F745xx STM32F746xx
134/227
DocID027590 Rev 4
tERASE256KB Sector (256 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-2.1
4
s
Program/erase parallelism
(PSIZE) = x 16
-1.5
2.6
Program/erase parallelism
(PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-8
16
s
Program/erase parallelism
(PSIZE) = x 16
-5.6
11.2
Program/erase parallelism
(PSIZE) = x 32
-4
8
Vprog
Programming voltage
32-bit program operation
2.7
-
3
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.7
-
3.6
V
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 100K erase operations.
Table 49. Flash memory programming with VPP
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
1. Guaranteed by design.
Unit
tprog
Double word programming
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-16
100(2)
2. The maximum programming time is measured after 100K erase operations.
µs
tERASE32KB Sector (32 KB) erase time
-
180
-
ms
tERASE128KB Sector (128 KB) erase time
-
450
-
tERASE256KB Sector (256 KB) erase time
-
900
-
tME
Mass erase time
-
6.9
-
s
Vprog
Programming voltage
-
2.7
-
3.6
V
VPP
VPP voltage range
-
7
-
9
V
IPP
Minimum current sunk on
the VPP pin
-10
-
-
mA
tVPP(3)
3. VPP should only be connected during programming/erasing.
Cumulative time during
which VPP is applied
-
-
-
1
hour
Table 48. Flash memory programming (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1) Unit



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